Bodmann, et al., “Analysis of photoexcited charge carrier density profiles in Si wafers by using an infrared camera,” Applied Physics Letters, vol.
Aberle, “Method for measuring minority and majority carrier mobilities in solar cells wafers passivated with hydrogenated amorphous silicon films,” 17th European Photovoltaic Solar Energy Conference, pp. del Canizo, et al., “Lifetime measurements by photoconductance techniques in wafers immersed in a passivating liquid,” Journal of the Electrochemical Society, vol. Pernau, “Minority Carrier Lifetimes of Multicrystalline SI Obtained from Different Methods: A Comparison,” 17th European Photovoltaic Solar Energy Conference, pp. Hezel, “Relationship between effective carrier lifetimes in silicon determined under steady-state and transient illumination,” Proc of the 16th European Photovoltaic Solar Energy Conference, 2000. 363-375, 2000.Describes how changes in the bulk lifetime will lower the fill factor of multicrystalline silicon solar cells. Cuevas, “Reduced fill factors in multicrystalline silicon solar cells due to injection-level dependent bulk recombination lifetimes,” Progress in Photovoltaics, vol. Sinton, “Emitter quantum efficiency from contactless photoconductance measurements,” Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference, pp. Brendel, “Separation of Bulk and Surface Recombination by Steady State Photoconductance Measurements,” Proc of the 16th European Photovoltaic Solar Energy Conference, May 2000.A very nice application note for using 2 wavelengths of light for separating surface and bulk recombination. Schmidt, “Measurement of differential and actual recombination parameters on crystalline silicon wafers,” IEEE Transactions on Electron Devices, vol. 6218-6221, Dec 1999.The math for analyzing data using the fully time dependent solutions rather than the steady-state or transient limits. Aberle, “Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors,” Journal of Applied Physics, vol.
Aberle, “Comparison of Effective Carrier Lifetimes in Silicon Determined by Transient and Quasi-Steady-State Photoconductance Measurements,” 2nd World Conference on Photovoltaic Solar Energy Conversion, pp. Schroder, “Carrier Lifetimes in Silicon,” IEEE Transactions on Electron Devices, vol. 1997.Tutorial-style paper concerning applications of QSSPC measurements to solar cells. Sinton, “Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance,” Progress in Photovoltaics: Research and Applications, vol.
#Pc1d download pdf
download PDF of paper (404 KB)First major reference for QSSPC photoconductance method. Stuckings, “Quasi-Steady-State Photoconductance, A New Method for Solar Cell Material and Device Characterization,” Proc of the 25th IEEE Photovoltaic Specialists Conference, pp. download PDF of paper (296 KB)Determination of the ambipolar recombination coefficient at 1.66e-30 cm6/s +or-15%. Swanson, “Recombination in highly injected silicon (solar cells),” IEEE Trans.
578-583, 1985.Classic reference for a method to separate bulk recombination from dopant diffusion recombination on lightly-doped wafers using the injection-level dependence of lifetime. Swanson, “Measurement of the Emitter Saturation Current by a Contactless Photoconductivity Decay Method,” Proc of the 18th IEEE Photovoltaic Specialists Conference, pp.
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